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成果速递|小型无掩膜光刻直写系统的新研究应用

更新时间:2020-07-29点击次数:1679

    随着电子信息产业的高速发展,集成电路的需求出现了井喷式的增长。使得掩膜的需求急剧增加,目前制作掩膜的主要技术是电子束直写,但该制作效率非常低下,并且成本也不容小觑,在这种背景下人们把目光转移到了无掩膜光刻技术。

    英国Durham Magneto Optics公司致力于研发小型台式无掩膜光刻直写系统(MicroWriter ML3),为微流控、MEMS、半导体、自旋电子学等研究域提供方便的微加工方案。传统的光刻工艺中所使用的铬玻璃掩膜板需要由业供应商提供,但是在研发过程中,掩膜板的设计通常需要根据实际情况多次改变。无掩膜光刻技术通过以软件设计电子掩膜板的方法,克服了这问题。与通过物理掩膜板进行光照的传统工艺不同,激光直写是通过电脑控制DMD微镜矩阵开关,经过光学系统调制,在光刻胶上直接曝光绘出所要的图案。同时其还具备结构紧凑(70cm X 70cm X 70cm)、高直写速度,高分辨率(XY:<1 um)的点。采用集成化设计,全自动控制,可靠性高,操作简便。

前沿进展

() SMALL: 高性能的具备实际应用前景的晶圆MoS2晶体管

    原子层的过渡金属二硫化物(TMD)被认为是下代半导体器件的重要研究热点。然而,目前大部分的器件都是基于层间剥离来获取金属硫化物层,这样只能实现微米的制备。在本文中,作者提出种用化学气相沉积(CVD)制备多层MoS2薄层,进而改善所制备器件的相关性能。采用四探针法测量证明接触电阻降低个数量。进步,基于该法制备的连续大面积MoS2薄层,采用小型无掩膜光刻直写系统(MicroWriter ML3)构筑了顶栅场效应晶体管(FET)阵列。研究表明其阈值电压和场效应迁移率均有明显的提升,平均迁移率可以达到70 cm2V-1s-1可与层间剥离法制备的MoS2 FET结果相媲美。本工作创制了种规模化制备二维TMD功能器件和集成电路应用的有效方法。 

 

 图1. (a-e) 用CVD法制备大面积多层MoS2的原理示意及形貌结果。(g, h, i, j) 单层MoS2边界及多层MoS2片层岛的AFM测试结果,拉曼谱及光致发光谱结果

 

图2. 用无掩膜激光直写系统(MicroWriter)在MoS2薄层上制备的多探针(二探针/四探针)测量系统,以及在不同条件下测量的接触电阻和迁移率结果。证明所制多层MoS2的平均迁移率可以达到70 cm2V-1s-1 

图3. 用无掩膜光刻直写系统(MicroWriter)制备的大面积规模MoS2 FET阵列,及其场效应迁移率和阈值电压的分布性测量结果,证明该规模MoS2 FET阵列具备异且稳定的均性 


 

(二) Adv. Funct. Mater.: 二维超薄非层状Cr2S3纳米片的气相沉积制备与拉曼表征

    二维磁性材料在自旋磁电子学域展现出巨大的应用价值,但是大部分已报道的磁性材料都是具备范德瓦尔斯作用的层状结构,这种结构可以通过简单的剥离方法获得。与之相反,非层状超薄磁性材料制备工艺复杂且非常,其中Cr2S3就是种典型的反铁磁性非层状材料。在本文中,作者通过改进化学气相沉积(CVD)方法,成功制备出超薄的非层状Cr2S3纳米片(厚度薄可达2.5 nm),并深入研究了材料的Raman振动模式及热导性,同时用无掩膜激光直写系统(MicroWriter)在材料表面制备电结构,测试系列相关电学性。

 

图4. 超薄Cr2S3纳米片的制备流程示意图及其光学形貌和AFM表面形貌 

 

图5. (a) SiO2/Si基底表面的Cr2S3纳米片的AFM表面形貌,(b) 用MicroWriter在Cr2S3纳米片上制备测量电,测量材料随温度变化的I-V性曲线,(c) 随温度变化的电导率测量结果及拟合曲线比较 

(三) Adv. Optical Mater.: 通过对全无机三卤钙钛矿纳米晶的调控,制备出性能良、空气稳定及可调谐的单分子层MoS2基混合光探测器件 

    全无机三卤钙钛矿纳米晶在过去的数年间受到广泛的关注,基于其异的光物理性和环境稳定性,该种新材料在混合光电器件研究域备受关注。在本文中,作者制备出种单层MoS2与三卤钙钛矿纳米晶结合的异质结光电器件,通过调节钙钛矿胶体浓度和表面配体量,进而实现调控该异质结器件的光电性。在空气环境中,该异质结光电器件的光响应可达6.4×105 mA/W,同时表现出异的热稳定性和工作稳定性。 

 

图6. CsPbBrPNC/monolayer MoS2异质结光电器件的物理结构及工作机理示意 

图7. 不同溶液浓度的钙钛矿前驱体所制备得到的异质结器件的光电性比较

 

    在该异质结的制备过程中,需要在所制备的单层MoS2表面制备Cr/Au电,用小型无掩膜光刻直写系统(MicroWriter),可以将所设计的电图案直接在MoS2层表面进行曝光,避免由与制备图形掩膜版所带来的时间及工艺成本,同时用MicroWriter所有的虚拟掩膜对准(Visual Mask Alignment, VMA)功能,可以在实际图形曝光过程中,准确地找到MoS2目标位置,这样大大地提高了实验设计和实施的灵活性。

 

图8. CsPbBr3 PNC/monolayer MoS2异质结光电器件的制备流程,红色框所示为用无掩膜激光直写系统(MicroWriter)所制备电结构示意

 

图9. (左)用MicroWriter制备的MoS2基器件的I-V性曲线,其中所示单层MoS2形貌及表面电;(右)MicroWriter虚拟掩膜功能(VMA)结果示意

 

 

 

文献汇总 

2019年:

[1] Leonardi F, Zhang Q, Kim Y H, et al. Solution-sheared thin films of a donor-acceptor random copolymer/polystyrene blend as active material in field-effect transistors[J]. Materials Science in Semiconductor Processing, 2019, 93: 105-110.

[2] Mortet V, Drbohlavova L, Lambert N, et al. Conductivity of boron-doped diamond at high electrical field[J]. Diamond and Related Materials, 2019, 98: 107476.

[3] Armistead F J, De Pablo J G, Gadêlha H, et al. Cells Under Stress: An Inertial-Shear Microfluidic Determination of Cell Behavior[J]. Biophysical journal, 2019, 116(6): 1127-1135.

[4] Salzillo T, Campos A, Mas-Torrent M. Solution-processed thin films of a charge transfer complex for ambipolar field-effect transistors[J]. Journal of Materials Chemistry C, 2019, 7(33): 10257-10263.

[5] Chen H, Liu G, Zhang S, et al. Fundus-simulating phantom for calibration of retinal vessel oximetry devices[J]. Applied optics, 2019, 58(14): 3877-3885.

[6] Zhang S, Xu H, Liao F, et al. Wafer-scale transferred multilayer MoS2 for high performance field effect transistors[J]. Nanotechnology, 2019, 30(17): 174002.

[7] Martin E L, Bryan M T, Pagliara S, et al. Advanced Processing of Micropatterned Elasto-Magnetic Membranes[J]. IEEE Transactions on Magnetics, 2019.

[8] Liu J, Singh A, Llandro J, et al. A low-temperature Kerr effect microscope for the simultaneous magneto-optic and magneto-transport study of magnetic topological insulators[J]. Measurement Science and Technology, 2019.

[9] Ye K, Liu L, Liu Y, et al. Lateral Bilayer MoS2–WS2 Heterostructure Photodetectors with High Responsivity and Detectivity[J]. Advanced Optical Materials, 2019: 1900815.

[10] Gilboa T, Zvuloni E, Zrehen A, et al. Automated, Ultra‐Fast Laser‐Drilling of Nanometer Scale Pores and Nanopore Arrays in Aqueous Solutions[J]. Advanced Functional Materials, 2019: 1900642.

[11] You H, Zhuo Z, Lu X, et al. 1T′-MoTe2-Based On-Chip Electrocatalytic Microdevice: A Platform to Unravel Oxidation-Dependent Electrocatalysis[J]. CCS Chemistry, 2019: 396-406.

[12] Fan X, Wei G, Lin X, et al. Phase-Change Based Interlayer Exchange Coupling Control[J]. arXiv preprint arXiv:1907.10784, 2019.

[13]Zhang Q, Leonardi F, Pfattner R, et al. A Solid‐State Aqueous Electrolyte‐Gated Field‐Effect Transistor as a Low‐Voltage Operation Pressure‐Sensitive Platform[J]. Advanced Materials Interfaces, 2019: 1900719.

[14] Yang R, Liu L, Feng S, et al. One-Step Growth of Spatially Graded Mo1-xWxS2 Monolayer with Wide Span in Composition (from x= 0 to 1) at Large Scale[J]. ACS applied materials & interfaces, 2019.

[15] Zhang L, Shen S, Li M, et al. Strategies for Air‐Stable and Tunable Monolayer MoS2‐Based Hybrid Photodetectors with High Performance by Regulating the Fully Inorganic Trihalide Perovskite Nanocrystals[J]. Advanced Optical Materials, 2019: 1801744.

[16] Zhou S, Wang R, Han J, et al. Ultrathin Non‐van der Waals Magnetic Rhombohedral Cr2S3: Space‐Confined Chemical Vapor Deposition Synthesis and Raman Scattering Investigation[J]. Advanced Functional Materials, 2019, 29(3): 1805880.

[17] Chen Y, Casals B, Sanchez F, et al. Solid-State Synapses Modulated by Wavelength-Sensitive Temporal Correlations in Optic Sensory Inputs[J]. ACS Applied Electronic Materials, 2019.

[18] Gu Y, Oliferenko S. Cellular geometry scaling ensures robust division site positioning[J]. Nature communications, 2019, 10(1): 268.

2018年:

[1] Wei G, Lin X, Si Z, et al. Optical control of magnetism in NiFe/VO2 heterostructures[J]. arXiv preprint arXiv:1805.02453, 2018.

[2] Davydova M, Taylor A, Hubík P, et al. Characteristics of zirconium and niobium contacts on boron-doped diamond[J]. Diamond and Related Materials, 2018, 83: 184-189.

[3] Campos A, Riera-Galindo S, Puigdollers J, et al. Reduction of charge traps and stability enhancement in solution-processed organic field-effect transistors based on a blended n-type semiconductor[J]. ACS applied materials & interfaces, 2018, 10(18): 15952-15961.

[4] Jia Z, Hu W, Xiang J, et al. Grain wall boundaries in centimeter-scale continuous monolayer WS2 film grown by chemical vapor deposition[J]. Nanotechnology, 2018, 29(25): 255705.

[5]Tarn M D, Sikora S N F, Porter G C E, et al. The study of atmospheric ice-nucleating particles via microfluidically generated droplets[J]. Microfluidics and nanofluidics, 2018, 22(5): 52.

[6] Jin B, Huang P, Zhang Q, et al. Self‐Limited Epitaxial Growth of Ultrathin Nonlayered CdS Flakes for High‐Performance Photodetectors[J]. Advanced Functional Materials, 2018, 28(20): 1800181.

[7] Vallès F, Palau A, Rouco V, et al. Angular flux creep contributions in YBa2Cu3O7−δ nanocomposites from electrical transport measurements[J]. Scientific reports, 2018, 8(1): 5924.

[8] L?pez-Mir L, Frontera C, Aramberri H, et al. Anisotropic sensor and memory device with a ferromagnetic tunnel barrier as the only magnetic element[J]. Scientific reports, 2018, 8(1): 861.

[9] Xu H, Zhang H, Guo Z, et al. High‐Performance Wafer‐Scale MoS2 Transistors toward Practical Application[J]. Small, 2018, 14(48): 1803465.

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